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SI9926BDY-T1-E3

SI9926BDY-T1-E3

SI9926BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6.2A 8-SOIC

compliant

SI9926BDY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.2A
Rds On (Max) @ Id, Vgs 20mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.14W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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