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SI8900EDB-T2-E1

SI8900EDB-T2-E1

SI8900EDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 20V 5.4A 10-MFP

compliant

SI8900EDB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.71930 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.4A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 10-UFBGA, CSPBGA
Supplier Device Package 10-Micro Foot™ CSP (2x5)
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