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SI8900EDB-T2-E1

SI8900EDB-T2-E1

SI8900EDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 20V 5.4A 10-MFP

non-compliant

SI8900EDB-T2-E1 Pricing & Ordering

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3,000 $1.71930 -
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Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.4A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 10-UFBGA, CSPBGA
Supplier Device Package 10-Micro Foot™ CSP (2x5)
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