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SI8497DB-T2-E1

SI8497DB-T2-E1

SI8497DB-T2-E1

Vishay Siliconix

MOSFET P-CH 30V 13A 6MICROFOOT

non-compliant

SI8497DB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.23104 -
6,000 $0.21696 -
15,000 $0.20288 -
30,000 $0.19302 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-microfoot
Package / Case 6-UFBGA
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