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SI8483DB-T2-E1

SI8483DB-T2-E1

SI8483DB-T2-E1

Vishay Siliconix

MOSFET P-CH 12V 16A 6MICRO FOOT

non-compliant

SI8483DB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21985 -
6,000 $0.20645 -
15,000 $0.19305 -
30,000 $0.18367 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 26mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1840 pF @ 6 V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-Micro Foot™ (1.5x1)
Package / Case 6-UFBGA
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