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SI8409DB-T1-E1

SI8409DB-T1-E1

SI8409DB-T1-E1

Vishay Siliconix

MOSFET P-CH 30V 4.6A 4MICROFOOT

non-compliant

SI8409DB-T1-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.49280 -
6,000 $0.46816 -
15,000 $0.45056 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.47W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
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