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SI8406DB-T2-E1

SI8406DB-T2-E1

SI8406DB-T2-E1

Vishay Siliconix

MOSFET N-CH 20V 16A 6MICRO FOOT

non-compliant

SI8406DB-T2-E1 Pricing & Ordering

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3,000 $0.25270 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-Micro Foot™ (1.5x1)
Package / Case 6-UFBGA
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