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SI8401DB-T1-E3

SI8401DB-T1-E3

SI8401DB-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 3.6A 4MICROFOOT

non-compliant

SI8401DB-T1-E3 Pricing & Ordering

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3,000 $1.17290 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.47W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
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