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SI7983DP-T1-GE3

SI7983DP-T1-GE3

SI7983DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 7.7A PPAK SO-8

non-compliant

SI7983DP-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.7A
Rds On (Max) @ Id, Vgs 17mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
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