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SI7868ADP-T1-GE3

SI7868ADP-T1-GE3

SI7868ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 40A PPAK SO-8

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SI7868ADP-T1-GE3 Pricing & Ordering

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3,000 $2.37006 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 6110 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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