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SI7615BDN-T1-GE3

SI7615BDN-T1-GE3

SI7615BDN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 29A/104A PPAK

compliant

SI7615BDN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Discontinued at Digi-Key
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4890 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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