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SI7430DP-T1-GE3

SI7430DP-T1-GE3

SI7430DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 150V 26A PPAK SO-8

compliant

SI7430DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.41239 -
6,000 $1.36338 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1735 pF @ 50 V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 64W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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