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SI7374DP-T1-GE3

SI7374DP-T1-GE3

SI7374DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 24A PPAK SO-8

non-compliant

SI7374DP-T1-GE3 Pricing & Ordering

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3,000 $1.78182 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 23.8A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 56W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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