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SI7315DN-T1-GE3

SI7315DN-T1-GE3

SI7315DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 150V 8.9A PPAK1212-8

non-compliant

SI7315DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.59778 -
6,000 $0.56971 -
15,000 $0.54967 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 315mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 75 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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