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SI7190DP-T1-GE3

SI7190DP-T1-GE3

SI7190DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 18.4A PPAK SO-8

non-compliant

SI7190DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.04610 -
6,000 $1.00980 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 118mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2214 pF @ 125 V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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