Welcome to ichome.com!

logo
Home

SI7119DN-T1-GE3

SI7119DN-T1-GE3

SI7119DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 200V 3.8A PPAK1212-8

compliant

SI7119DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.47560 -
6,000 $0.45327 -
15,000 $0.43732 -
68000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

PMH1200UPEH
STU5N95K3
STU5N95K3
$0 $/piece
SQM50P03-07_GE3
DMT6006LSS-13
STF32NM50N
SIDR622DP-T1-RE3
NTMFS4C03NT1G
NTMFS4C03NT1G
$0 $/piece
PMZB390UNEYL

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.