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SI7113ADN-T1-GE3

SI7113ADN-T1-GE3

SI7113ADN-T1-GE3

Vishay Siliconix

MOSFET P-CH 100V 10.8A PPAK

non-compliant

SI7113ADN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.26082 -
6,000 $0.24493 -
15,000 $0.22903 -
30,000 $0.21791 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 132mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 515 pF @ 50 V
FET Feature -
Power Dissipation (Max) 27.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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