Welcome to ichome.com!

logo
Home

SI7106DN-T1-E3

SI7106DN-T1-E3

SI7106DN-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 12.5A PPAK1212-8

non-compliant

SI7106DN-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.61041 -
6,000 $0.58175 -
15,000 $0.56128 -
110470 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 19.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.