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SI6473DQ-T1-E3

SI6473DQ-T1-E3

SI6473DQ-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 6.2A 8TSSOP

compliant

SI6473DQ-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.08W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
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