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SI5920DC-T1-GE3

SI5920DC-T1-GE3

SI5920DC-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 8V 4A 1206-8

compliant

SI5920DC-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 32mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 4V
Power - Max 3.12W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
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