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SI5908DC-T1-E3

SI5908DC-T1-E3

SI5908DC-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 4.4A 1206-8

non-compliant

SI5908DC-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.65600 -
6,000 $0.62520 -
15,000 $0.60320 -
1084 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.4A
Rds On (Max) @ Id, Vgs 40mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
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