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SI5906DU-T1-GE3

SI5906DU-T1-GE3

SI5906DU-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK FET

compliant

SI5906DU-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 31mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V
Power - Max 10.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Dual
Supplier Device Package PowerPAK® ChipFet Dual
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