Welcome to ichome.com!

logo
Home

SI5858DU-T1-GE3

SI5858DU-T1-GE3

SI5858DU-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 6A PPAK CHIPFET

compliant

SI5858DU-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.3W (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IXFT20N80Q
IXFT20N80Q
$0 $/piece
HUFA76409P3
HUFA76409P3
$0 $/piece
FQPF1N50
FQP3N40
FQP3N40
$0 $/piece
94-4156PBF
2N7002TC
2N7002TC
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.