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SI5515CDC-T1-GE3

SI5515CDC-T1-GE3

SI5515CDC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

non-compliant

SI5515CDC-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.35595 -
6,000 $0.33285 -
15,000 $0.32130 -
30,000 $0.31500 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 36mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 632pF @ 10V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
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