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SI5513CDC-T1-GE3

SI5513CDC-T1-GE3

SI5513CDC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

compliant

SI5513CDC-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.24368 -
6,000 $0.22883 -
15,000 $0.21398 -
30,000 $0.20358 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A, 3.7A
Rds On (Max) @ Id, Vgs 55mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
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