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SI5509DC-T1-GE3

SI5509DC-T1-GE3

SI5509DC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6.1A 1206-8

compliant

SI5509DC-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.1A, 4.8A
Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V
Power - Max 4.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
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