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SI5457DC-T1-GE3

SI5457DC-T1-GE3

SI5457DC-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 6A 1206-8

compliant

SI5457DC-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.22563 -
6,000 $0.21188 -
15,000 $0.19813 -
30,000 $0.18850 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
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