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SI5442DU-T1-GE3

SI5442DU-T1-GE3

SI5442DU-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 25A PPAK

non-compliant

SI5442DU-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.27120 -
6,000 $0.25360 -
15,000 $0.24480 -
30,000 $0.24000 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 10mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® ChipFet Single
Package / Case PowerPAK® ChipFET™ Single
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