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SI5419DU-T1-GE3

SI5419DU-T1-GE3

SI5419DU-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 12A PPAK CHIPFET

compliant

SI5419DU-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.24368 -
6,000 $0.22883 -
15,000 $0.21398 -
30,000 $0.20358 -
11979 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
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