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SI4972DY-T1-GE3

SI4972DY-T1-GE3

SI4972DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 10.8A 8-SOIC

non-compliant

SI4972DY-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.8A, 7.2A
Rds On (Max) @ Id, Vgs 14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V
Power - Max 3.1W, 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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