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SI4936BDY-T1-GE3

SI4936BDY-T1-GE3

SI4936BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

non-compliant

SI4936BDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.62320 -
5,000 $0.59394 -
12,500 $0.57304 -
0 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.9A
Rds On (Max) @ Id, Vgs 35mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 15V
Power - Max 2.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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