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SI4931DY-T1-GE3

SI4931DY-T1-GE3

SI4931DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8SOIC

compliant

SI4931DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.47921 -
5,000 $0.45671 -
12,500 $0.44064 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6.7A
Rds On (Max) @ Id, Vgs 18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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