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SI4931DY-T1-E3

SI4931DY-T1-E3

SI4931DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8-SOIC

non-compliant

SI4931DY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.47921 -
5,000 $0.45671 -
12,500 $0.44064 -
0 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6.7A
Rds On (Max) @ Id, Vgs 18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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