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SI4925BDY-T1-GE3

SI4925BDY-T1-GE3

SI4925BDY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 5.3A 8-SOIC

non-compliant

SI4925BDY-T1-GE3 Pricing & Ordering

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2,500 $0.81675 -
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Name Value
Product Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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