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SI4922BDY-T1-GE3

SI4922BDY-T1-GE3

SI4922BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

non-compliant

SI4922BDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.84005 -
5,000 $0.81090 -
12,500 $0.79500 -
5000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 15V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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