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SI4914BDY-T1-GE3

SI4914BDY-T1-GE3

SI4914BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.4A 8-SOIC

compliant

SI4914BDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.4A, 8A
Rds On (Max) @ Id, Vgs 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 2.7W, 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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