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SI4914BDY-T1-E3

SI4914BDY-T1-E3

SI4914BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8.4A 8-SOIC

non-compliant

SI4914BDY-T1-E3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.4A, 8A
Rds On (Max) @ Id, Vgs 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 2.7W, 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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