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SI4900DY-T1-GE3

SI4900DY-T1-GE3

SI4900DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.3A 8-SOIC

compliant

SI4900DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.55440 -
5,000 $0.52668 -
12,500 $0.50688 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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