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SI4830CDY-T1-GE3

SI4830CDY-T1-GE3

SI4830CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

non-compliant

SI4830CDY-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V
Power - Max 2.9W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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