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SI4829DY-T1-GE3

SI4829DY-T1-GE3

SI4829DY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 2A 8SO

compliant

SI4829DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.24548 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 215mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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