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SI4590DY-T1-GE3

SI4590DY-T1-GE3

SI4590DY-T1-GE3

Vishay Siliconix

MOSFET N/P CHAN 100V SO8 DUAL

compliant

SI4590DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.41019 -
5,000 $0.38357 -
12,500 $0.37026 -
25,000 $0.36300 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A
Rds On (Max) @ Id, Vgs 57mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 50V
Power - Max 2.4W, 3.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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