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SI4511DY-T1-E3

SI4511DY-T1-E3

SI4511DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

non-compliant

SI4511DY-T1-E3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.2A, 4.6A
Rds On (Max) @ Id, Vgs 14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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