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SI4505DY-T1-GE3

SI4505DY-T1-GE3

SI4505DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V/8V 8-SOIC

compliant

SI4505DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.61600 -
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Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V, 8V
Current - Continuous Drain (Id) @ 25°C 6A, 3.8A
Rds On (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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