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SI4455DY-T1-E3

SI4455DY-T1-E3

SI4455DY-T1-E3

Vishay Siliconix

MOSFET P-CH 150V 2.8A 8SO

compliant

SI4455DY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.99495 -
5,000 $0.95810 -
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 295mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 5.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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