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SI4447DY-T1-E3

SI4447DY-T1-E3

SI4447DY-T1-E3

Vishay Siliconix

MOSFET P-CH 40V 3.3A 8SO

non-compliant

SI4447DY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.33900 -
5,000 $0.31700 -
12,500 $0.30600 -
25,000 $0.30000 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 15V, 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 805 pF @ 20 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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