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SI4423DY-T1-GE3

SI4423DY-T1-GE3

SI4423DY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 10A 8SO

non-compliant

SI4423DY-T1-GE3 Pricing & Ordering

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2,500 $1.27710 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 600µA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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