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SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 13.4A 8SO

compliant

SI4403CDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.33900 -
5,000 $0.31700 -
12,500 $0.30600 -
25,000 $0.30000 -
495 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 15.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2380 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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