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SI4200DY-T1-GE3

SI4200DY-T1-GE3

SI4200DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

compliant

SI4200DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.25425 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 415pF @ 13V
Power - Max 2.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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