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SI4143DY-T1-GE3

SI4143DY-T1-GE3

SI4143DY-T1-GE3

Vishay Siliconix

MOSFET P-CHANNEL 30V 25.3A 8SO

non-compliant

SI4143DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.33646 -
5,000 $0.31462 -
12,500 $0.30371 -
25,000 $0.29775 -
8241 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 25.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 6630 pF @ 15 V
FET Feature -
Power Dissipation (Max) 6W (Tc)
Operating Temperature -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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