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SI3909DV-T1-E3

SI3909DV-T1-E3

SI3909DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

compliant

SI3909DV-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 200mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.15W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
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