Welcome to ichome.com!

logo
Home

SI3900DV-T1-E3

SI3900DV-T1-E3

SI3900DV-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 2A 6-TSOP

SOT-23

non-compliant

SI3900DV-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.27120 -
6,000 $0.25360 -
15,000 $0.24480 -
30,000 $0.24000 -
250 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.